Call 0016 Space Electronics Open 5 Year Broad Agency Announcment, Modeling and Experiment with Compund Semiconductors for Applications in High Performance Circuits
Post Date
April 2nd 2009
Application Due Date
April 30th 2009
Funding Opportunity Number
BAA-VS-06-05-0016
CFDA Number(s)
12.800
Funding Instrument Type(s)
Cooperative Agreement
Grant
Other
Funding Activity Categories
Science and Technology and other Research and Development
Number of Awards
3
Eligibility Categories
Funding
-
Award Range:
$0 - $125000
Grant Description
BROAD AGENCY ANNOUNCEMENT BAA-VS-06-05 Air Force Research Laboratory/Directed Energy/Space Vehicles Directorate PROPOSAL CALL ANNOUNCEMENT (CALL 0016) BROAD AGENCY ANNOUNCEMENT TITLE: Space Electronics Open 5 Year Broad Agency Announcement BROAD AGENCY ANNOUNCEMENT NUMBER: BAA-VS-06-05 PROPOSAL CALL ANNOUCEMENT (CALL) TITLE: Modeling and Experiment with Compound Semiconductors for applications in high performance circuits. PROPOSAL CALL ANNOUNCEMENT (CALL) NUMBER: 0016 TECHNICAL POINT OF CONTACT: The technical point of contact for this CALL is Dr. Ashwani Sharma, AFRL/RVSE, Kirtland AFB, NM, Phone: 505-846-0165, Fax: 505-846-2290, Email: charles.stein@kirtland.af.mil. CONTRACTING POINTS OF CONTACT: Contracting points of contact for this CALL are: Contract Specialist: Andrea Stone, Det 8 AFRL/RVSE, Kirtland AFB, NM, Phone: 505-843-2883, Fax: NONE, Email: andrea.stone@kirtland.af.mil Contracting Officer: Shirley Lindom, Det 8 AFRL/RVSE, Kirtland AFB, NM, Phone 505-846-5935, Fax: NONE, Email: shirley.lindom@kirtland.af.mil REQUIREMENT DESCRIPTION: The Air Force Research Laboratory is soliciting proposals to outline a study program whose objective is to model wrap around gate Field Effect Transistors developed with large bandgap radiation tolerant materials, and to fabricate representative devices for ultimate testing to determine empirical performance, under Topic C2, Advanced Electronic Materials, Devices, and Circuits, subparagraph (2) Modeling of Advanced Materials for Space Electronics, of Space Electronics Technology Broad Agency Announcement VS-06-05 posted on 22 September 2006. See the following for detailed information: Development of Radiation Tolerant, High power, Terahertz Bandwidth FETs Present efforts in nano-scale structures devices includes studies associated with compound semiconductors in wrapped around gate metal oxide semiconductor field effect transistors (MOSFETs) and their applications as nano-inverters. This effort will complement the present research by studying field absorption and emission from sub-wavelength nano structured surfaces using rigorous coupled wave analysis. In addition to studying the industry standard Si technology, this efforts seeks to expand present research by including studies associated with high power, high speed III-V semiconductors as well as new radiation hard materials silicon carbide that can achieve detectivities higher than 1013/W when configured as ultra-violet detectors. In addition to this collaborative work the device reliability will be compared to classical technologies. The proposed research will be carried out in close interaction with the Electronics Foundations Group, AFRL/RVSE. ANTICIPATED FUNDING (Topic C2, subparagraph (2): Anticipated funding for this CALL (not per contract or award) is FY09: $25,000, FY10: $50,000, FY11: $50,000. This funding profile is an estimate only and will not be a contractual obligation for funding. All anticipated funding projections are subject to change at government discretion and depending on funds availability. PERIOD OF PERFORMANCE (Topic C2, Subparagraph 2): The anticipated period of performance for individual awards resulting from this call is thirty three (33) months for technical effort and three (3) months for final report submission. PAGE LIMITATIONS: The technical proposal including the C-SOW shall be limited to 5 pages single spaced, double-sided, 8.5 by 11-inch pages. Select an easy to read font no smaller than 12 pitch fixed or proportional font size 10 or larger. Smaller type may be used in figures and tables as long as it is clearly legible. The page limitation includes all information i.e., indices, photographs, foldouts (2 page), appendices, attachments, resumes, C-SOW, etc. Each printed side counts as one page. Blank pages, title pages, tables of content, lists, tabs or cover sheets are not included in the page count. The Government will not consider pages in excess of this limitation. PROPOSAL DUE DATE AND TIME: The due date for proposals submitted in response to this CALL is no later than 1:00 p.m. MDT on 30 April 2009. Proposals for any other technology area identified in the baseline BAA will not be accepted at this time unless a CALL for proposals in that specific area is open. Proposals received after the due dates and times shall be governed by the provisions of FAR 52.215-1(c)(3). PROPOSALS FOR FAR TYPE CONTRACTS SHALL BE SUBMITTED TO: Det 8 AFRL/PKVE, Attn: Andrea Stone, 2251 Maxwell St SE, Bldg 424, Kirtland AFB NM 87117-5773. Proposals sent to any inappropriate address are ineligible for award. Proposals sent via facsimile or electronic means will not be accepted. PROPOSALS FOR GRANT OPPORTUNITIES SHALL BE SUBMITTED TO: Submissions must be made through Grants.gov. Proposals sent via mail, facsimile or other electronic means will not be accepted. CALL AMENDMENTS: Offerors should monitor FedBizOps/EPS
Contact Information
-
Agency
Department of Defense
-
Office:
Air Force -- Research Lab
-
Agency Contact:
Shirley Lindom
Ms.
Phone 505-846-2935 -
Agency Mailing Address:
Office
- Agency Email Address:
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