GaN on SiC Advanced EW MMIC Production Capacity Project

Post Date

March 7th 2012

Application Due Date

April 23rd 2012

Funding Opportunity Number

BAA-12-03-PKM

CFDA Number(s)

12.800

Funding Instrument Type(s)

Cooperative Agreement

Funding Activity Categories

Science and Technology and other Research and Development

Number of Awards

1

Eligibility Categories

Unrestricted

Funding

• Estimated Total Funding:

  $8500000

• Award Range:

  $None - $None

Grant Description

The DPA Title III gallium nitride (GaN) on silicon carbide (SiC) Advanced EW monolithic microwave integrated circuit (MMIC) Production Capability Project will establish a domestic, economically viable, open-foundry merchant supplier production capability for high frequency, wide bandwidth (32 п 38 GHz), MMICs employing GaN epitaxy on 100mm SiC substrates. An open-foundry merchant supplier is one whose business model makes its production capabilities available for use by external companies to fabricate chips to their own specifications. It is evidenced by the presence of a process design kit (PDK) that captures the design rules and processes in a manner that allows external users to design chips that meet their needs in a small number (preferable first pass) of design iterations.

Contact Information

• Agency

  Department of Defense

• Office:

  Air Force -- Research Lab

• Agency Contact:

  Laura Ortiz
  Agreements Negotiator
  (937) 656-9883
  

• Agency Mailing Address:

  For Questions & Assistance

• Agency Email Address:

  laura.ortiz@wpafb.af.mil