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Integrity and Reliability of Integrated CircuitS (IRIS), Phase III

Post Date

July 17th 2015

Application Due Date

September 4th 2015

Funding Opportunity Number


CFDA Number(s)


Funding Instrument Type(s)

Cooperative Agreement

Funding Activity Categories

Science and Technology and other Research and Development

Eligibility Categories



  • Award Range:

    $0 - $0

Grant Description

DARPA is soliciting research proposals for a comprehensive exploration of the effects of extreme physical stresses on wear-out and aging mechanisms in CMOS FETs at 28nm and/or 14nm lithography node. The objective of the IRIS Program Phase III is to explore aging effects in both transistors and transistor interconnects to create predictive models and to test how precisely and rapidly specific wear-out mechanisms can be asserted, for the purposes of accelerating burn-in, aging, and wear-out. See the full DARPA-BAA-15-47 document attached.

Contact Information

  • Agency

    Department of Defense

  • Office:

    Defense Advanced Research Projects Agency

  • Agency Contact:

    Mr. Kerry Bernstein
    Program Manager

  • Agency Mailing Address:

    MTO BAA Coordinator

  • Agency Email Address:

  • Location:

    DARPA - MTO - BAA0718

  • More Information:

    DARPA Solicitations Page

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